Device simulation method and device simulator

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364488, 395500, G06F 1750

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active

056847238

ABSTRACT:
A simulation method for obtaining internal information at discrete points within a semiconductor device to be analyzed based on information related to the semiconductor device by forming a coefficient matrix A having matrix equation A.multidot.X=b with respect to each of the discrete points within the semiconductor device and solving the matrix equation. X denotes a matrix of physical quantities to be obtained and b is a known matrix. The device simulation method includes the steps of (a) assigning a rectangular work region to the semiconductor device regardless of its shape so that it fits within the work region, (b) forming a matrix of elements with respect to each of the discrete points within the analyzing region and dummy elements with respect to each of the discrete points within a non-analyzing region at least within the work region. The dummy element have values substituted into the matrix such that they form a diagonal term of the matrix respectively with a positive integer and remaining dummy elements respectively are "0", (c) forming a matrix (L.multidot.U) by dividing the matrix into lower and upper triangular matrices L and U, (d) calculations using a stored iteration method and the specific matrix (L.multidot.U) until a convergence condition is satisfied, to obtain a solution for each element of the matrix X, and (e) determining, using the solution for each element of the matrix X, whether the semiconductor device is operational.

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