Aqueous solution for cleaning a semiconductor substrate

Details Aqueous solution for cleaning a semiconductor substrate Aqueous solution for cleaning a semiconductor substrate

1999-02-02

2000-05-23

Skane, Christine

Cleaning compositions for solid surfaces, auxiliary compositions

Cleaning compositions or processes of preparing

For cleaning a specific substrate or removing a specific...

510435, 510499, 510504, 510505, 510506, H01L 21306, C11D 750

Patent

active

060666099

ABSTRACT:
Aqueous solutions for cleaning semiconductor substrates are formed primarily of a base, hydrogen peroxide and a complexing agent. The complexing agent is a heterocyclic hydrocarbon having a ring size of at least 9 and at most 18 atoms and at least 3 heteroatoms, for example nitrogen, oxygen or sulfur. In the case of nitrogen-containing cryptands, these may additionally be formed with functional reactive groups and/or aliphatic bridges between the nitrogen atoms (cage structures).

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"Cleaning Solution Based on Hydrogen Peroxide for Use in Silicon Semiconductor Technology" (Kern et al.), RCA Review, Jun. 1970, pp. 187-207.

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