Method of manufacturing a gap filling for shallow trench isolati

Details Method of manufacturing a gap filling for shallow trench isolati Method of manufacturing a gap filling for shallow trench isolati

1998-04-10

2000-05-23

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438437, 438435, 438296, H01L 2176

Patent

active

060665432

ABSTRACT:
A method of manufacturing a semiconductor device includes the steps of forming a trench for isolating an element region on a semiconductor substrate, burying a first oxide film in the trench so as to contact a surface of the trench, flattening a surface of the first oxide film, heating the semiconductor substrate to form a second oxide film at an interface between the surface of the trench and the first oxide film, and annealing the semiconductor substrate.

REFERENCES:
patent: 5447884 (1995-09-01), Fahey et al.
patent: 5561078 (1996-10-01), Tasaka
patent: 5607875 (1997-03-01), Nishizawa et al.
patent: 5648282 (1997-07-01), Yoneda
patent: 5763309 (1998-06-01), Chang
patent: 5763315 (1998-06-01), Benedict et al.
patent: 5786262 (1997-04-01), Jang et al.

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