Automatic diameter control for crystal growing facilities

Details Automatic diameter control for crystal growing facilities Automatic diameter control for crystal growing facilities

1974-02-07

1976-12-21

Bascomb, Jr., Wilbur L.

Chemistry: physical processes

Physical processes

Crystallization

156601, 156617R, B01D 900, B01J 1718

Patent

active

039985989

ABSTRACT:
In the Czochralsky method of crystal growing, a crystal or ingot is pulled from a melt. The control of the present invention will find particular application in the Czochralsky pulling of large crystals such as those of silicon which typically are 40 inches long and 3 inches in diameter. The control assures a uniform diameter over the entire length of the crystal as well as avoids the formation of "flats" on the surface of the crystal. This is achieved by optically sighting the crystal melt interface and adjusting the sighting for variations in melt level.

REFERENCES:
patent: 3291650 (1966-12-01), Dohmen et al.
patent: 3493770 (1970-02-01), Dessauer et al.
patent: 3499736 (1970-03-01), Zwaneburg
patent: 3621213 (1971-11-01), Jen et al.
patent: 3692499 (1972-09-01), Andrychuk
patent: 3740563 (1973-06-01), Reichard

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