Merged bipolar/CMOS technology using electrically active trench

Details Merged bipolar/CMOS technology using electrically active trench Merged bipolar/CMOS technology using electrically active trench

1986-12-22

1989-04-04

Macon, Robert S.

357 41, 357 55, 357 71, H01L 2978

Patent

active

048190527

ABSTRACT:
Disclosed is a structure and method of fabricating bipolar and MOSFET devices isolated by an electrically active trench. A doped epitaxial layer (24) is formed on semiconductor substrate (10). A trench (36) is formed through the epitaxial layer (24) down to the substrate (10). The trench (36) is filled with a conductive material (54) and a topside contact (182) is formed in electrical contact with the conductive trench. A bipolar transistor (176) is formed in the epitaxial area (38) on one side of the trench (36) and a MOSFET transistor (178) is formed in the epitaxial area (40) on the other side of the trench (36). Plural contacts (200-206) can be made to the top surface of the trench (186), thereby maintaining the underlying substrate (10) at a desired and uniform potential.

REFERENCES:
patent: 4672410 (1987-06-01), Miura et al.

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