Optoelectronic bistable apparatus

Details Optoelectronic bistable apparatus Optoelectronic bistable apparatus

1987-07-17

1989-04-04

James, Andrew J.

Coherent light generators

Particular component circuitry

Optical pumping

357 16, 357 30, 357 34, 357 38, 357 37, 372 43, 372 45, 372 50, H01L 2970, H01L 2974, H01L 3106

Patent

active

048190489

ABSTRACT:
An optoelectronic bistable apparatus having a double heterojunction structure comprising a light-emitting first semiconductor layer of n type GaAs interlaid between a second semiconductor layer of n.sup.- type AlGaAs and a third semiconductor layer of p.sup.+ type AlGaAs, the second and third semiconductor layers having a broader energy gap than that of the first semiconductor layer. An extremely thin fourth semiconductor layer of p.sup.+ type GaAs with a high impurity concentration is deposited on the second semiconductor layer. A fifth semiconductor layer of n.sup.- type AlGaAs, n.sup.+ type AlGaAs and n.sup.+ type GaAs is formed on the fourth semiconductor layer. At least a portion of the fifth semiconductor layer which contacts the fourth semiconductor layer has a broader energy gap than that of the second semiconductor layer.

REFERENCES:
patent: 4534033 (1985-08-01), Nishizawa et al.
patent: 4599632 (1986-07-01), Bethea et al.
"A New Double Heterostructure Optoelectronic Switching Device Using Molecular Beam Epitaxy"; Taylor, G. W., et al, J. Appl. Phys. 59(2) pp. 596-600 (1986).
"Dynamic Switch Logic-A New Concept for Digital Optical Logic Using DOES Devices"; Taylor, G. W., et al, Presented at IEDM 1985, pp. 645-657.

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