Method for depositing epitaxial semiconductor from the liquid ph

Details Method for depositing epitaxial semiconductor from the liquid ph Method for depositing epitaxial semiconductor from the liquid ph

1978-02-21

1978-10-31

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 118415, H01L 21208

Patent

active

041233026

ABSTRACT:
A furnace boat has a plurality of wells therein. A first slide movably extends through the boat along and across the bottom of the wells. The first slide carries a substrate on which layers of semiconductor material are to be deposited. A second slide movable extends through the boat and across the wells adjacent the open tops of the wells. The second slide supports the starter deposition materials. A wafer extends partially across each well adjacent each slide, and an inclined guide plate extends partially across each well from adjacent the second slide to an edge of the wafer. Molten deposition material is deposited from the second slide onto the inclined guide plate and rolls into an end of the space between the wafer and the substrate carried on the first slide. The deposition material is then sucked into the space between the wafer and substrate by capillary action. Upon cooling the furnace boat, the semiconductor material will deposit from the deposition material onto the substrate. The first slide can be moved to carry the substrate into each well where a separare epitaxial layer can be deposited on the substrate.

REFERENCES:
patent: 3533856 (1970-10-01), Panish et al.
patent: 3753801 (1973-08-01), Lockwood et al.
patent: 3997377 (1976-12-01), Izawa et al.
patent: 4032370 (1977-06-01), Matare
patent: 4063972 (1977-12-01), Akai et al.

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