MIS type semiconductor device formed in a semiconductor substrat

Details MIS type semiconductor device formed in a semiconductor substrat MIS type semiconductor device formed in a semiconductor substrat

1990-11-19

1992-07-07

James, Andrew J.

357 2311, 357 52, H01L 2702

Patent

active

051287390

ABSTRACT:
In order to provide semiconductor devices having a high switching speed and high packing density of the circuit elements, a p-MOSFET of a CMOS IC is formed on an n-type well which has a higher impurity concentration compared with that of the n-type substrate region and which is formed at selected portions under the p-MOSFET. In order to decrease the capacitance of the source and drain of the p-MOSFET, the n-type well regions are selectively formed only at portions under the gate electrode and the field insulating layer, and a junction of the p.sup.+ -type drain and source region is formed directly on a part of the n.sup.- -type substrate region. As a result, the latch-up phenomenon can be suppressed and the junction capacitance of the devices becomes smaller. Therefore, the switching speed and the packing density of the CMOS IC are improved.

REFERENCES:
patent: 3751722 (1973-08-01), Richman
patent: 3946419 (1976-03-01), De Witt et al.
patent: 4104784 (1978-08-01), Klein
patent: 4132998 (1979-01-01), Dingwall
patent: 4306916 (1981-12-01), Wollesen et al.
patent: 4435895 (1984-03-01), Parrillo et al.
patent: 4468852 (1984-09-01), Cerofolini
patent: 4480375 (1984-11-01), Cottrell et al.
patent: 4599789 (1986-07-01), Gasner
patent: 4633289 (1986-12-01), Chen
Webster's Ninth New Collegiate Dictionary, Merriam-Webster, Inc., 1984, pp. 104, 341, 342.
Patent Abstracts of Japan, vol. 6, No. 259, Dec. 17, 1982 (E-149) [1137].
International Electron Devices Meeting, Dec. 13-15, 1982, Paper 29-3, pp. 706-709, "Twin-Tub CMOS II-an advanced VLSI Technology" (IEEE).
European Search Report, the Hague, Aug. 12, 1985, Examiner: D. L. D. Morvan.

Affiliated with

Also associated with

Rating

MIS type semiconductor device formed in a semiconductor substrat does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MIS type semiconductor device formed in a semiconductor substrat, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MIS type semiconductor device formed in a semiconductor substrat will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1833144