Voltage controlled resonant transmission semiconductor device

Details Voltage controlled resonant transmission semiconductor device Voltage controlled resonant transmission semiconductor device

1985-11-22

1987-06-09

James, Andrew J.

357 2314, 357 59, 357 22, H01L 2978

Patent

active

046724230

ABSTRACT:
In a transistor structure a buried gate positioned in the layer above a conduction channel and below a broad gate which overlaps the source and drain, when the voltages applied to the buried gate and the overlapping gate are varied independently, a potential well between two barriers can be established which permits conduction by the physical mechanism of resonant transmission. The potential well between two barriers required for the resonant transmission mechanism is achieved in one structure by a buried gate under an overlapping gate with both width and separation dimension control and in a second structure using split-buried gate under an overlapping gate that is embossed in the region of the split gate. With gate and separation dimensions of the order of 1000 .ANG. switching speeds of the order of 10.sup.-12 seconds are achieved.

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