Plasma process apparatus and plasma process method

Details Plasma process apparatus and plasma process method Plasma process apparatus and plasma process method

1998-07-22

2000-05-23

Dang, Thi

Coating apparatus

Gas or vapor deposition

With treating means

118718, 156345, C23C 1600

Patent

active

060654252

ABSTRACT:
In order to effect a plasma process at a high rate, such as formation of a high-quality deposit film having very uniform thickness and quality over a large-area substrate, (1) an oscillation frequency of an RF generator is used in the range of 30 to 600 MHz, (2) a matching circuit and a cathode electrode are connected through a transmission line and RF power is supplied through the transmission line, (3) the cathode electrode is of an electrically conductive structure of a rod shape and at a connection part between the cathode electrode and an inner conductor of the transmission line, an external shape of a cross section of the cathode electrode is the same as an external shape of a cross section of the inner conductor, and (4) at least the connection part between the cathode electrode and the inner conductor of the transmission line is covered by a dielectric member having the same external shape as an external shape of a transmission medium in the cross section of the transmission line.

REFERENCES:
patent: 5540781 (1996-07-01), Yamagami et al.
patent: 5846612 (1998-12-01), Takaki et al.
patent: 5861063 (1999-01-01), Shou
H. Curtins, et al., "Influence of Plasma Excitation Frequency for a-Si: H Thin Film Deposition", Plasma Chemistry and Plasma Processing, vol. 7, No. 3, 1987, pp. 267-273.

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