Power MOSFET transistor

Details Power MOSFET transistor Power MOSFET transistor

1994-06-01

1995-09-19

Fourson, George

Fishing, trapping, and vermin destroying

H01L 21265

Patent

active

054515360

ABSTRACT:
A power MOSFET device formed in a face of a semiconductor layer of a first conductivity type is provided. A first, second and third source region of a second conductivity type are formed in the face of the semiconductor layer within a moat and adjacent to its edges. A source conductor is insulatively disposed adjacent the face of the semiconductor layer and contacts the first, second and third source regions at a plurality of locations. A first and second drain region of a second conductivity type is also formed in the face of the semiconductor layer disposed spaced from and between the first and second source regions and the second and third source regions, respectively. A drain conductor is insulatively disposed adjacent the face of the semiconductor layer and contacts the first and second drain regions at a plurality of locations. A first and second field plate are insulatively disposed adjacent the face of the semiconductor layer and substantially adjacent and surrounding the first and second drain regions respectively. A first, second, third and fourth prongs forming gates of the device are insulatively disposed adjacent the face of the semiconductor layer and between the first field plate and the first and second source regions and between the second field plate and the second and third source regions. A portion of each of the gate prongs is disposed substantially above a portion of the first and second field plates. Conductive contacts connect the first and second field plates and the first and second drain regions.

REFERENCES:
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patent: 4288802 (1981-09-01), Ronen
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patent: 4471373 (1984-09-01), Shimizu et al.
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patent: 5187552 (1993-02-01), Hendrickson et al.
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"Threshold-Voltage Instability in MOSFET's Due to Channel Hot-Hole Emission", Richard B. Fair, Robert C. Sun, IEEE Transactions on Electron Devices, vol. ED-28, No. 1, Jan. 1981, pp. 83-94.

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