Field effect transistor with T-shaped gate electrode

Details Field effect transistor with T-shaped gate electrode Field effect transistor with T-shaped gate electrode

1988-09-08

1992-02-18

Prenty, Mark

357 68, 357 71, 357 59, H01L 2910, H01L 2348, H01L 2904

Patent

active

050898639

ABSTRACT:
A field effect transistor comprises n type impurity regions formed spaced apart on a P type semiconductor substrate to be the source.multidot.drain regions and a T-shaped gate electrode formed on the region sandwiched by the n type impurity regions with an insulating film interposed therebetween, the gate electrode being formed of upper and lower two layers with the upper layer wider than the lower layer, wherein a n type channel region is formed between the source and the drain when the prescribed voltage is applied to the T-shaped gate electrode.

REFERENCES:
patent: 4476482 (1984-10-01), Scott
patent: 4845534 (1989-07-01), Fukuta
Japanese J. of Appl. Physics: "Microfabrication Technique by Gas plasma Etching Method", by H. Komiya et al., vol. 15, p. 19 (1976).

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