Process for removing film from a substrate

Details Process for removing film from a substrate Process for removing film from a substrate

1994-04-12

1995-09-19

Powell, William

Etching a substrate: processes

Mechanically shaping, deforming, or abrading of substrate

216 48, 15665911, B44C 122, C03C 1500

Patent

active

054512956

ABSTRACT:
A method for removing film from a substrate, and more particularly, photoresist from a semiconductor wafer, by a shear stress process. A wafer is coated with a medium having coefficients of thermal expansion and elasticity, such as water, and then cooled. The cooling causes shear stress to occur between the photoresist and the wafer, thereby loosening the photoresist from the wafer. The wafer is then heated to remove the medium and photoresist from the wafer. The coating, cooling and heating steps are repeated until all of the photoresist is removed. Relative to the prior art, this invention provides a novel process for removing film from a substrate that minimizes expense; substantially cuts processing time; is less complex; less hazardous; and environmentally favorable.

REFERENCES:
patent: 4119483 (1978-10-01), Hubsch et al.
patent: 4448636 (1984-05-01), Baber
patent: 4519872 (1985-05-01), Anderson et al.
patent: 4586980 (1986-05-01), Hirai et al.
patent: 5275689 (1994-01-01), Felten et al.

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