Patent
1979-06-06
1982-02-02
Larkins, William D.
357 4, 357 20, 357 49, 357 55, H01L 2704
Patent
active
043142699
ABSTRACT:
A semiconductor resistor comprises a semiconductor resistor layer along at least an area of an internal side surface of a groove formed in a predetermined configuration, such as a figure of .pi., in a semiconductor block of a conductivity type opposite to that of the resistor layer. Semiconductor contact layers are formed preferably simultaneously with the resistor layer in electrical contact therewith on a principal surface of the block, with which surface the internal side surface may or may not form the right angle. The block may or may not be supported by a substrate, such as a sapphire, a spinel, or a like insulator single crystal. The groove may have a bottom in the block or the substrate. When the bottom is either in the block or on a semiconductor bulk serving as the substrate, a P-N junction should be formed along the extension of the bottom. A highly doped region may be previously formed near the bottom when the resistor layer is formed by diffusing an impurity onto the internal side surface and to the bottom.
REFERENCES:
patent: 4017885 (1977-04-01), Kendall et al.
patent: 4065742 (1977-12-01), Kendall et al.
patent: 4118728 (1978-10-01), Berry
Larkins William D.
Vlsi Technology Research Association
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