Method of making an article comprising a TiN.sub.x layer

Details Method of making an article comprising a TiN.sub.x layer Method of making an article comprising a TiN.sub.x layer

1991-04-26

1992-02-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437190, 148DIG126, H01L 21283

Patent

active

050894382

ABSTRACT:
Disclosed is a method that comprises selective deposition of titanium nitride TiN.sub.x on III-V compound semiconductor material. The TiN.sub.x can advantageously be used as contact metal. Exemplarily, deposition is by rapid thermal low pressure (RT-LP) MOCVD using dimethylamidotitanium with H.sub.2 carrier gas.

REFERENCES:
"Characteristics of a Poly-Silicon Contact Plug Technology", by J. Klein et al., Proceedings of the 6th International IEEE VLSI Multilevel Interconnection Conference, Jun. 12-13, 1989, p. 494.
"Properties of LPCVD Titanium Nitride for ULSI Metallization", by A. Sherman, Proceedings of the 6th International IEEE VLSI Multilevel Interconnection Conference, Jun. 12-13, 1989, p. 497.
"Titanium Nitride Thin Films: Properties and APCVD Synthesis Using Organometallic Precursors", by R. M. Fix et al., Proceedings of the Materials Research Society Fall Symposium, Boston, MA, 1989.
"Synthesis of Thin Films by Atmospheric Pressure Chemical Vapor Deposition Using Amido and Imido Titanium (IV) Compounds as Precursors", by R. M. Fix et al., Chemical and Materials, vol. 2(3), 1990, pp. 235-241.

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