Forming multilayer interconnections for a semiconductor device b

Details Forming multilayer interconnections for a semiconductor device b Forming multilayer interconnections for a semiconductor device b

1984-12-24

1987-06-09

Chaudhuri, Olik

Metal working

Method of mechanical manufacture

Assembling or joining

29591, 148DIG19, 148DIG26, 427 91, H01L 21428, H01L 21443

Patent

active

046709673

ABSTRACT:
A method of forming a multilayer interconnection for a semiconductor device comprising a first insulation layer deposited on a substrate having semiconductor elements, first interconnection patterns, a second insulation layer interposed between the first interconnection patterns, a third insulation layer covering the first interconnection patterns and second interconnection patterns contacted with the first interconnection patterns, wherein the first interconnection patterns are formed in such a manner by vapor phase growth process that the first interconnection patterns cover both edges of the interposed second insulation layer.

REFERENCES:
patent: 3366519 (1968-01-01), Pritchard et al.
patent: 3801365 (1974-04-01), Hrzek
patent: 4272561 (1981-06-01), Rothman et al.
patent: 4293637 (1981-10-01), Hatada et al.
patent: 4330931 (1982-05-01), Liu
patent: 4353935 (1982-10-01), Symersky
patent: 4377438 (1983-03-01), Moriya et al.
patent: 4403392 (1983-09-01), Oshima et al.
patent: 4441247 (1984-04-01), Gargini et al.
patent: 4462149 (1984-07-01), Schwabe
patent: 4476157 (1984-10-01), Shinozaki
patent: 4510670 (1985-04-01), Schwabe et al.
patent: 4520041 (1985-05-01), Aoyama et al.
patent: 4523372 (1985-06-01), Balda et al.
Cooke, "A Review of LPCVP Metallization for Semiconductor Devices", Vacuum, vol. 37, No. 2, pp. 67-73, Feb. 1985.

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