Method of making a semiconductor laser with end zones for reduci

Details Method of making a semiconductor laser with end zones for reduci Method of making a semiconductor laser with end zones for reduci

1985-09-23

1987-06-09

Hearn, Brian E.

Metal working

Plural diverse manufacturing apparatus including means for...

Common reciprocating support for spaced tools

29583, 29576C, 29578, 29576B, 148 15, H01L 21263, H01L 2178

Patent

active

046709665

ABSTRACT:
A semiconductor laser having mirror faces serving as resonators, in which the active laser region (2) includes end zones adjoining the mirror faces which have implanted ions, preferably protons, with associated crystal damage. The end zones have a length which is at least equal to the diffusion length of the recombining charge carriers in the end zones. As a result of the high recombination rate in the end zones substantially no non-radiating recombination occurs at the mirror faces so that mirror erosion is avoided.
The invention relates to a method in which the end zones are formed by an ion bombardment on the upper surface of the semiconductor wafer with a number of lasers, which wafer at the area of the mirror (cleavage) faces to be formed is provided with grooves which do not extend up to the active layer, in which grooves the end zones are provided via an ion bombardment through the active layer.

REFERENCES:
patent: 3969686 (1976-07-01), Sefres et al.
patent: 4236296 (1980-12-01), Woolhouse et al.
patent: 4237601 (1980-12-01), Woolhouse et al.
patent: 4352835 (1982-10-01), Holbrook et al.
patent: 4476563 (1984-10-01), Von Ruyven
patent: 4539743 (1985-10-01), Anthony et al.
Ghondi, VLSI Fabrication Principles-Silicon and Gallium Arsenide, John Wiley & Sons, 1983, New York, pp. 346-348.

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