Fishing – trapping – and vermin destroying
Patent
1994-09-01
1995-08-29
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 47, 437977, 437919, H01L 2170, H01L 2700
Patent
active
054459869
ABSTRACT:
In a method of manufacturing a semiconductor device having a capacitor constituted by a lower electrode, an upper electrode, and a dielectric film arranged between the lower and upper electrodes, a polysilicon film containing a Group V element as an impurity is formed. The first etching step of forming an uneven portion on a surface of the polysilicon film is performed. The second etching step of forming an uneven portion on the surface of the polysilicon film is performed. The second etching step has an etch rate whose impurity concentration dependency is different from an impurity concentration dependency of an etch rate of the first etching step, thereby forming the uneven portion on the surface of the polysilicon film.
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patent: 5286668 (1994-02-01), Chou
G. Q. Lo et al., "Highly Reliable SiO.sub.2 /Si.sub.3 N.sub.4 Stacked Dielectric on Rapid-Thermal-Nitrided Rugged Polysilicon for High-Density DRAM's", IEEE Electron Device Letters, vol. 13, No. 7, Jul. 1992, pp. 372-274.
Patent Abstracts of Japan, vol. 17, No. 241 (E-1364), May 14, 1993.
Chaudhuri Olik
NEC Corporation
Tsai H. Jey
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