Method for producing bipolar transistor having reduced base-coll

Details Method for producing bipolar transistor having reduced base-coll Method for producing bipolar transistor having reduced base-coll

1994-08-09

1995-08-29

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437133, 437228, 437912, 437 60, 148DIG72, 257197, 257220, 257593, H01L 21265

Patent

active

054459761

ABSTRACT:
The invention described herein includes, in one of its forms, a method for fabricating a bipolar transistor having a reduced base-collector capacitance. A specific embodiment includes forming a selectively etchable material 44 over a highly doped subcollector layer 42, removing portions of the selectively etchable material 44 and then growing collector 46, base 48, and emitter 50 layers over the structure. The selectively etchable material 44 may then be removed to form an undercut region between the highly doped subcollector layer 42 and the highly doped base 48. The structure provides the advantage of improved high-frequency and high-power operation.

REFERENCES:
patent: 4967252 (1990-10-01), Awano
patent: 5118382 (1992-06-01), Cronin et al.
patent: 5166081 (1992-11-01), Inada et al.
patent: 5221640 (1993-06-01), Sato
patent: 5270223 (1993-12-01), Liu
patent: 5298438 (1994-03-01), Hill
patent: 5344786 (1994-09-01), Bayraktaroglu

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