Sputtered pin amorphous silicon semi-conductor device and method

Details Sputtered pin amorphous silicon semi-conductor device and method Sputtered pin amorphous silicon semi-conductor device and method

1981-03-16

1983-11-22

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

204192S, 204192P, 357 2, 357 30, H01L 3106, H01L 3118

Patent

active

044170920

ABSTRACT:
A high efficiency amorphous silicon PIN semi-conductor device is constructed by the sequential sputtering of N, I and P layers of amorphous silicon and at least one semi-transparent ohmic electrode. A method of construction produces a PIN device, exhibiting enhanced physical integrity and facilitates ease of construction in a singular vacuum system and vacuum pump down procedure.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson
patent: 4251289 (1981-02-01), Moustakas et al.
H. Okamoto et al., "Device Physics & Design of a-Si ITO/p-i-n Heteroface Solar Cells", Solar Energy Mat'ls., vol. 2, pp. 313-325, (1980).
D. A. Anderson et al., "An Assessment of the Suitability of RF Sputtered Amorphous Hydrogenated Si as a Potential Solar Cell Material", J. Electronic Mat'ls., vol. 9, pp. 141-152, (1980).
D. E. Carlson et al., "Amorphous Silicon Solar Cell", Appl. Phys. Lett., vol. 28, pp. 671-673, (1976).
M. H. Brodsky et al., "Doping of Sputtered Amorphous Semiconductors", IBM Tech. Disc. Bull., vol. 19, pp. 4802-4803, (1977).

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