Process to obtain semi-insulating single crystalline epitaxial l

Details Process to obtain semi-insulating single crystalline epitaxial l Process to obtain semi-insulating single crystalline epitaxial l

1990-08-15

1993-06-01

Fourson, George

Fishing, trapping, and vermin destroying

437107, H01L 21205

Patent

active

052159388

ABSTRACT:
The present invention is related to a process to obtain semi-insulating single crystalline epitaxial layers of arsenides and phosphides of metals from group III of the periodic table, mainly Gallium Arsenide (GaAs) and Indium Phosphide (InP) useful for making electronic devices. The semi-insulating layers can be grown through the use of any vapor phase epitaxial growth technique, even if residual impurities are present in the material normally grown with any of these techniques. The semi-insulating nature is achieved without intentionally adding compensating impurities. The process is characterized by its control of the electric conductivity of the single crystalline epitaxial layer of such semiconducting compounds through the growth rate and the temperature of the crystal during the growth. The semi-insulating layers are useful to make field effect transistors, integrated circuits, diodes and other electronic devices.

REFERENCES:
Native Defects in Gallium Arsenide, J. C. Bourgoin et al., J. Appl. Phys. 64(9), pp. 65-91 Jan. 1, 1988.
Epitaxial GaAs by Hose Spece Vapor Transport, F. Chavez et al., J. Appl. Phys. 54(11), pp. 6646-6651 Nov. 1983.
Compensation Mechanism in Semi-insulating GaAs: The Role of Intrinsic Acceptor Defects; H. J. von Bardeleben et al., Appl. Phys. Lett. 53 (12), pp. 1089-1091 Sep. 19, 1988.
Effects of the Growth Conditions on the Incorporation of Deep Levels in Vapor-Grown GaAs; M. Ozeki et al., J. Appl. Phys. 50(7), pp. 4808-4813.
Transient Capacitance Spectroscopy in Heavily Compensated Semi-conductors, D. Stievenard et al., Solid State Electronics, vol. 28, No. 5, pp. 485-492, 1985.
Influence of the Growth Conditions on the Incorporation of Deep Levels in VPE GaAs, D. Bois, J. of Appl. Phys., vol. 47(9), pp. 4137-4144.
Photoluminescence and Electrical Properties of Epitaxial GaAS Grown by Close Space Vapor Transport; J. Mimila Arroyo et al., Mat. Res. Soc. Symp. Proc. vol. 56 1986 Materials Research Society.
Vapor Phase Transport and Epitaxial Growth of GaAs.sub.1-x P.sub.x Using Water Vapor, G. E. Gottlieb, J. of the Electrochemical Society, vol. 112, No. 2, pp. 192-196.
Photoluminescence and Electrical Properties of Close Space Vapor Transport GaAs Expitaxial Layers, J. Mimila-Arroyo et al., J. Appl. Phys. 58(9), pp. 3652-3654, Nov. 1, 1985.
High Quality GaAs Epitaxial Layers, Grown by Csvt. F. Chavez et al., Mats. Res. Soc. Symp. Proc. vol. 37 1985 Materials Research Society.
Gallium Arsenide Field-Effect Transistor by Close Spaced Vapor Transport Epitaxy, J. Mimila-Arroyo et al., Appl. Phys. Lett. 51(24), pp. 2004-2006 Dec. 14, 1987.
Oxygen in Gallium Arsenide, J. C. Bourgoin et al., Aug. 1990.

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