Method of localized etching of Si crystals

Details Method of localized etching of Si crystals Method of localized etching of Si crystals

1974-11-27

1976-08-31

Drummond, Douglas J.

Adhesive bonding and miscellaneous chemical manufacture

Methods

Surface bonding and/or assembly therefor

29580, 156 17, 252 793, 427 88, H01L 2131

Patent

active

039779254

ABSTRACT:
A Si crystal substrate is orientated so that the 100-plane of the crystal lattice coincides with a surface thereof to be etched, and etch-resistant material such as composed of Si.sub.3 N.sub.4, Ta, etc. is coated onto selected areas of the surface to be etched and an etchant composed of a mixture containing for each 100 gr of HNO.sub.3, 20 gr of H.sub.2 O, 4 gr of HF and 110 gr of CH.sub.3 COOH is applied onto the surface to be etched for a period of time sufficient to produce a groove or recess having a relatively gradually sloped side wall in relation to the (100) surface being etched.

REFERENCES:
patent: 3680205 (1972-08-01), Kravitz
patent: 3749619 (1973-07-01), Muraoka et al.
patent: 3796612 (1974-03-01), Allison
patent: 3810796 (1974-05-01), Skaggs et al.
patent: 3839111 (1974-10-01), Ham et al.
patent: 3929531 (1975-12-01), Hattori et al.

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