Non-volatile memory array using gate breakdown structure

Details Non-volatile memory array using gate breakdown structure Non-volatile memory array using gate breakdown structure

Filed on

1997-03-27

Date issued

1999-09-07

Examiner

Zarabian, A.

Patent Class

Static information storage and retrieval

SubClass

Floating gate

SubSubClass

Particular connection

Other Related Categories

365226, G11C 1134

Type

Patent

Status

active

Patent number

059497122

Description

ABSTRACT:
Non-volatile storage elements are provided in an array on an integrated circuit, where the non-volatile storage elements are low voltage CMOS devices and hence compatible in a manufacturing sense with other similar transistors on an integrated circuit, thereby not requiring special types of transistors for the non-volatile storage. The non-volatile storage elements are one-time programmable devices which are programmed by rupturing their gate oxide.

REFERENCES:
patent: 4980859 (1990-12-01), Guterman
patent: 5523971 (1996-06-01), Rao
patent: 5579524 (1996-11-01), Kikinis
patent: 5581455 (1996-12-01), Rossi
patent: 5612249 (1997-03-01), Sun
patent: 5646885 (1997-07-01), Matsuo

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