Electrostatic discharge protection circuit triggered by MOS tran

Electricity: electrical systems and devices – Safety and protection of systems and devices – Transient responsive

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Details

361 56, 361117, 361119, 361127, H02H 300

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active

059496347

ABSTRACT:
An electrostatic discharge protection circuit comprises an NMOS transistor and a silicon-controlled rectifier. The NMOS transistor is configured with one source/drain region connected to a first node, and its gate as well as another source/drain region connected to a second node. The silicon-controlled rectifier comprises a PNP transistor, an NPN transistor, and a resistor. The PNP transistor is provided with a first emitter connected to the first node, a first base disconnected from the first node, and a first collector. The NPN transistor is provided with a second emitter connected to the second node, a second base connected to the first collector and a second collector connected to the first base. However, the resistor is connected between the second base and the second node. The NMOS transistor enters breakdown to trigger the silicon-controlled rectifier to conduct a discharge current when electrostatic discharge stress occurs between the first node and the second node.

REFERENCES:
patent: 5400202 (1995-03-01), Metz et al.

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