Gate-to-ohmic metal contact scheme for III-V devices

Details Gate-to-ohmic metal contact scheme for III-V devices Gate-to-ohmic metal contact scheme for III-V devices

1990-11-28

1992-06-09

Jackson, Jr., Jerome

357 15, 357 68, 357 71, H01L 2980, H01L 2952

Patent

active

051211742

ABSTRACT:
A direct shorting contact structure comprising a metal layer (18') makes ohmic contact with a source (10) and/or drain (12) region and with a gate electrode (22). The direct contact between source or drain and gate over the active region (16) reduces the area otherwise required for such contact and eliminates a second layer (24) of interconnection metallization otherwise required for such contact. The metal layer preferably comprises a first layer (18'a) of a material selected from the group consisting of gold-germanium, nickel-germanium, gold-germanium-nickel, molybdenum-germanium, and aluminum-germanium in ohmic contact with the source or drain region and with the gate electrode and a second layer (18'b) of a good electrically conductive, thermally stable, electromigration-resistant metal capable of providing good step coverage overlying the first layer. An example of the second layer is tungsten and its nitrides and silicides. Such a composite layer avoids step coverage and reliability problems which exist with other metallization schemes.

REFERENCES:
patent: 4574298 (1986-03-01), Yamagishi et al.
patent: 4628338 (1986-12-01), Wakayama et al.

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