Microwave semiconductor device with via holes and associated str

Details Microwave semiconductor device with via holes and associated str Microwave semiconductor device with via holes and associated str

1997-05-16

1999-09-07

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For high frequency device

257698, 257276, H01L 2334

Patent

active

059491400

ABSTRACT:
A semiconductor device for a microwave circuit includes a semiconductor substrate with an active element formed in the top surface, surface wirings on the top surface of the semiconductor substrate which are connected to terminals of the active element, and rear electrodes on the rear surface of the semiconductor substrate which are connected to the surface wirings by via holes. A structure includes the microwave semiconductor device, and a dielectric substrate which has surface wirings on a top surface. The semiconductor device is fixed with the dielectric substrate such that the rear electrodes of the semiconductor device are connected with the wirings on the top surface of the dielectric substrate.

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MMIC Design GaAs FETs and HEMTs, Chapter 3: "Overview of Passive Elements", Peter H. Ladbrooke, 1989, p. 29 (Artech House).
"A New Millimeter-Wave Flip-Chip IC on Si Subtrate", 1994 Asia-Pacific Microwave Conference Proceedings, Sakai et al., 1994, pp. 291-294.

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