Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1997-08-06
1999-09-07
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257223, 257234, H01L 27148, H01L 29768
Patent
active
059490993
ABSTRACT:
It is an object of the present invention to provide a solid-state image sensing device with a vertical shutter structure allowing the size of the solid-state image sensing device with ease. An electric-charge exhausting unit is provided on the same side of a sensor array comprising a plurality of sensor units arranged to form a straight line as an electric-charge transferring unit wherein the electric-charge exhausting unit comprising an electric-charge exhaust drain having a shape resembling an island and an electric-charge exhausting gate with a bent shape surrounding the electric-charge exhaust drain is provided in such a way that the electric-charge exhausting unit is in contact with a first region of a read gate, and only one electric-charge exhausting unit is provided for each pair of sensor units adjacent to each other.
REFERENCES:
patent: 4245164 (1981-01-01), Funabashi
patent: 4389661 (1983-06-01), Yamada
patent: 4489423 (1984-12-01), Suzuki
patent: 5703386 (1997-12-01), Yasuda et al.
Maki Yasuhito
Yasuda Minoru
Munson Gene M.
Sony Corporation
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