Solid-state image sensing device and its driving method

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

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Details

257223, 257234, H01L 27148, H01L 29768

Patent

active

059490993

ABSTRACT:
It is an object of the present invention to provide a solid-state image sensing device with a vertical shutter structure allowing the size of the solid-state image sensing device with ease. An electric-charge exhausting unit is provided on the same side of a sensor array comprising a plurality of sensor units arranged to form a straight line as an electric-charge transferring unit wherein the electric-charge exhausting unit comprising an electric-charge exhaust drain having a shape resembling an island and an electric-charge exhausting gate with a bent shape surrounding the electric-charge exhaust drain is provided in such a way that the electric-charge exhausting unit is in contact with a first region of a read gate, and only one electric-charge exhausting unit is provided for each pair of sensor units adjacent to each other.

REFERENCES:
patent: 4245164 (1981-01-01), Funabashi
patent: 4389661 (1983-06-01), Yamada
patent: 4489423 (1984-12-01), Suzuki
patent: 5703386 (1997-12-01), Yasuda et al.

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