Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1996-05-24
1998-12-08
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 20, 257185, 257190, 257191, 257192, 257200, 257205, H01L 310328
Patent
active
058474099
ABSTRACT:
A semiconductor device that enables to prevent the electron transport property of a semiconductor active layer from degrading even if a semiconductor compositionally-graded buffer layer is used. This device contains a semiconductor substrate, a semiconductor active layer lattice-mismatched with the substrate, and a semiconductor compositionally-graded buffer layer formed between the substrate and the active layer. The compositionally-graded buffer layer has a semiconductor superlattice structure including first semiconductor sublayers and second semiconductor sublayers that are alternately stacked in a direction perpendicular to the substrate. Each of the first sublayers is made of a first semiconductor material. Each of the second sublayers is made of a second semiconductor material different in composition from the first semiconductor material. The lattice constant of the first and second sublayers decreases or increases stepwise from a side near the substrate and the other side near the active layer. The lattice constant of any one of the second sublayers may be larger than that of an adjacent one of the first sublayers and is smaller than that of another adjacent one of the first sublayers.
REFERENCES:
patent: 4994868 (1991-02-01), Geissberger et al.
patent: 5621228 (1997-04-01), Ando
patent: 5633516 (1997-05-01), Mishima et al.
patent: 5650642 (1997-07-01), Sawada et al.
Mobilities of a two-dimensional electron gas in pseudomorphic and strain-free InAlAs/InGaAs HEMT Structures, Matsuno et al., Int'l Symposium GaAs and Related Commpounds, 1992, pp. 729-734.
Abraham Fetsum
NEC Corporation
Thomas Tom
LandOfFree
Semiconductor device with superlattice-structured graded buffer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device with superlattice-structured graded buffer , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with superlattice-structured graded buffer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-180557