Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1996-12-17
1998-12-08
Anderson, Bruce
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250396ML, 250398, H01J 3730
Patent
active
058474021
ABSTRACT:
This invention concerns a charged particle beam pattern transfer system which uses a flux of charged particles, e.g. from an electron or ion beam, to transfer a mask pattern to a sensitized substrate. In particular, the invention is applicable to an electron beam reduction transfer system which demagnifies and transfers a mask pattern defined by multiple mask subfields to a sensitized substrate using the step-and-repeat transfer method. The invention provides a system for transferring the mask subfields, separated from one another on the mask by boundary strips, onto a wafer such that the transferred images of the mask subfields are joined together on the wafer as transfer subfields lacking any intervening boundary regions.
REFERENCES:
patent: 5260151 (1993-11-01), Berger et al.
patent: 5466904 (1995-11-01), Pfeiffer et al.
patent: 5545902 (1996-08-01), Pfeiffer et al.
Anderson Bruce
Nikon Corporation
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