Semiconductor device with hole conduction via strained lattice

Details Semiconductor device with hole conduction via strained lattice Semiconductor device with hole conduction via strained lattice

1985-04-24

1987-05-12

Edlow, Martin H.

357 16, 357 4, 357 231, H01L 2980

Patent

active

046654151

ABSTRACT:
A field-effect transistor includes a conduction channel between a source terminal and a drain terminal, which channel employs holes as the charge carriers. The conduction channel is disposed within a layer of material comprising a group III-V compound of the periodic table and having a crystalline lattice structure which is stressed in two dimensions by means of epitaxial growth upon a thicker and rigid supporting layer comprising a different group III-V compound having a larger lattice spacing. The layer having the conduction channel is relatively thin being on the order of a few electron wavelength in thickness. The stretching of the layer having the conduction channel shift the energy levels of holes therein to remove the degenerate state thereof, thereby elevating light holes to an energy level characterized by increased mobility.

REFERENCES:
patent: 4538165 (1985-09-01), Chang et al.
Applied Physics Letters, vol. 44, No. 1, Jan. 1, 1984, pp. 139-141, Stormer et al., "Temperature Dependence of the Mobility of Two-Dimensional Hole Systems in Modulation Doped GaAs--(AlGa) As".
Applied Physics Letters, vol. 36, No. 8, Apr. 15, 1980, pp. 685-687, Stormer et al., "Two-Dimensional Hole Gas at a Semiconductor Heterojunction Interface".
Journal of Applied Physics, vol. 48, No. 7, Jul. 1977, pp. 3018-3023, Van Der Ziel et al., "Absorption, Refractive Index and Birefringence of AlAs--GaAs monolayers".

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