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357 4, 357 16, 357 58, H01L 2726, H01L 4700, H01L 4702, H01L 2712

Patent

active

048019828

ABSTRACT:
A Gunn effect oscillator comprises a body of semiconductor material in which electrons are injected from one region to another region via a very thin intervening system. The thin region has a thickness which is less than the mean free electron path length and is typically of the order of 100 .ANG., which results in hot electrons being transferred from the injection region into the other region in which electron bunches form.

REFERENCES:
patent: 4539581 (1985-09-01), Malik et al.
patent: 4649405 (1987-03-01), Eastman

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