Fishing – trapping – and vermin destroying
Patent
1991-01-25
1992-06-09
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 41, 437 43, 437913, 148DIG82, H01L 21265
Patent
active
051206730
ABSTRACT:
For formation of the LDD structure with stable impurity profiles, a first ion-implantation using a gate electrode as a mask is carried out through a gate oxide film for doping the semiconductor substrate with impurity atoms, covering the entire surface of the structure with a doped polysilicon film overlain by a protective oxide film, covering the protective oxide film with an intentionally undoped polysilicon film, anisotropically etching the intentionally undoped polysilicon film for forming a side wall on both sides of the side wall, removing exposed portions of the protective oxide film, carrying out a second ion-implantation using the gate electrode and the side wall as a mask for doping the semiconductor substrate with impurity atoms again, thereby forming heavily doped impurity regions partially overlapped with lightly doped impurity regions.
REFERENCES:
patent: 4735680 (1988-04-01), Yen
patent: 4808544 (1989-02-01), Matsui
patent: 4837180 (1989-06-01), Chao
patent: 4906589 (1990-03-01), Chao
patent: 4951100 (1990-08-01), Parrillo
patent: 4963504 (1990-10-01), Huang
patent: 4984042 (1991-01-01), Pfiester et al.
Hearn Brian E.
NEC Corporation
Nguyen Tuan
LandOfFree
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