Method of forming an inverse T-gate FET transistor

Details Method of forming an inverse T-gate FET transistor Method of forming an inverse T-gate FET transistor

1991-07-10

1992-06-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 44, 437913, 437235, 437245, H01L 21265

Patent

active

051206684

ABSTRACT:
A method of forming an LDD field effect transistor with an inverted "T"-gate structure in which consecutive, conformal layers of polysilicon, metal and nitride or oxide are deposited to fill the recess in a composite interconnect layer on top of a trench isolated region of a semiconductor substrate. These conformal layers successively decrease in thickness and are selectively etched in two steps to form a self-aligned inverted T structure. A first reactive ion etch (RIE) step preferentially etches the exposed outer polysilicon to a certain depth. During a second step RIE the polysilicon layer is completely etched down to the a gate oxide surface and the metal layer is preferentially etched so that subtends only the remaining nitride or oxide cap.

REFERENCES:
patent: 4441931 (1984-04-01), Levin
patent: 4464459 (1984-08-01), Majima et al.
patent: 4717689 (1988-01-01), Maas et al.
patent: 4728620 (1988-03-01), Jeuch
patent: 4851365 (1989-07-01), Jeuch
patent: 4939154 (1990-07-01), Shimbo

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