Ion implantation into In-based group III-V compound semiconducto

Details Ion implantation into In-based group III-V compound semiconducto Ion implantation into In-based group III-V compound semiconducto

1987-07-29

1989-04-04

Roy, Upendra

Fishing, trapping, and vermin destroying

357 65, 437 19, 437 24, 437 29, 437247, 437942, H01L 21265

Patent

active

048187216

ABSTRACT:
Implantation of a Group V ion species (e.g., phosphorus or arsenic) into an In-based Group III-V compound semiconductor (e.g., InP, InGaAs) followed by implantation of Be ions produces a shallow p-type surface layer and avoids significant in-diffusion of the dopant species. High carrier concentrations and activation efficiencies are attained. The technique has application in the fabrication of FETs, APDs and ohmic contacts.

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