Monolithic integrated circuit

Details Monolithic integrated circuit Monolithic integrated circuit

1980-10-01

1983-02-15

Davie, James W.

357 56, 357 80, H01L 2334, H01L 2350

Patent

active

043743943

ABSTRACT:
A monolithic integrated circuit comprises a substrate having first and second opposing major surfaces. A semiconductor device is at the first major surface, a circuit film pattern is on the second major surface, and means for interconnecting the device to the film pattern are provided. On the first surface, a metallization layer surrounds the device and has a thickness greater than the height of the device from the first surface. Additionally, an electrode extension projects from the device to a height substantially equal to the thickness of the metallization layer.

REFERENCES:
patent: 3150299 (1964-09-01), Noyce
patent: 3173101 (1965-03-01), Stelmak
patent: 3209214 (1965-09-01), Murphy
patent: 3343256 (1967-09-01), Smith et al.
patent: 3402331 (1968-09-01), Rittner
patent: 3986196 (1976-10-01), Decker et al.
Pucel et al., "An X-Band GaAs FET Monolithic Power Amplifier", 1979 International Microwave Symposium Digest, Apr. 30-May 2, 1979, pp. 387-389.

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