Method of manufacturing semiconductor memory device

Details Method of manufacturing semiconductor memory device Method of manufacturing semiconductor memory device

1986-10-03

1989-04-04

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

H01L 2994

Patent

active

048187186

ABSTRACT:
A semiconductor integrated circuit device, especially an EPROM (Electrically Programmable Read Only Memory) device which consists of an MIS type memory transistor portion having a floating gate electrode and a control gate electrode on said floating gate electrode, and of an MIS type transistor portion having a gate electrode is formed by patterning the same conductor layer as the floating gate electrode in the periphery of said MIS type memory transistor portion.

REFERENCES:
patent: 3925803 (1975-12-01), Kobayashi
patent: 3930067 (1975-12-01), Gorrissen
patent: 4151021 (1979-04-01), McElroy
patent: 4302766 (1981-11-01), Guterman et al.
patent: 4330850 (1982-05-01), Jacobs et al.
patent: 4458407 (1984-07-01), Hoeg, Jr. et al.

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