Semiconductor device having a substrate covered with a high impu

Details Semiconductor device having a substrate covered with a high impu Semiconductor device having a substrate covered with a high impu

1984-02-24

1985-05-07

James, Andrew J.

357 54, 357 65, 357 68, 357 90, H01L 2904, H01L 2348, H01L 2934

Patent

active

045161470

ABSTRACT:
A semiconductor device has a semiconductor substrate of a first conductivity type, and a diffused region of a second conductivity type. A first insulation film is formed on the substrate, having an opening exposing the surface of the diffused region. First and second polycrystalline layers doped with impurities associated with the second conductivity type are disposed in the opening, and the concentration of the impurities of the first polycrystalline layer is higher than that of the second polycrystalline layer. A metal electrode is formed on the second polycrystalline layer.

REFERENCES:
patent: 3881242 (1975-05-01), Nuttall et al.
patent: 4087571 (1978-05-01), Kamins et al.
patent: 4128845 (1978-12-01), Sakai
patent: 4146902 (1979-03-01), Tanimoto et al.
patent: 4157269 (1979-06-01), Ning et al.
patent: 4210689 (1980-07-01), Komatsu
patent: 4227203 (1980-10-01), Mikoshiba
patent: 4239559 (1980-12-01), Ito

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