Aluminum liftoff masking process and product

Details Aluminum liftoff masking process and product Aluminum liftoff masking process and product

1987-10-13

1989-04-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG10, 148DIG56, 148DIG84, 148DIG100, 357 35, 357 48, 357 88, 357 91, 437 22, 437 32, 437 41, 437 74, 437192, 437247, 437944, 437987, H01L 2188, H01L 21306

Patent

active

048187127

ABSTRACT:
An aluminum liftoff masking process is effected on a prepared gallium arsenide wafer having a base thereon. Successive layers of silicon dioxide and aluminum are deposited on the wafer. The aluminum and silicon dioxide layers are successively etched, including undercutting of the aluminum layer. Base majority carriers are implanted through the windows to the base and refractory metal ohmic contacts are built up in the windows. After forming the base contacts, the base contact areas may be passivated. The aluminum layer and any overlaying layers thereon are removed by etching off the aluminum.

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