Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1996-03-25
1997-12-23
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438720, 438742, 438688, 216 67, 216 77, H01L 2100
Patent
active
057007403
ABSTRACT:
A method is described for the prevention of the corrosion of interconnection wirings made of aluminum or aluminum-copper alloys in semiconductor integrated circuits. The invention uses a weak solution of NH.sub.4 OH to remove chlorine-containing residues that adhere to the sidewalls of the metal wirings patterned by reactive ion etching using chlorine-containing gaseous components, thus effectively quenching the chain reaction of aluminum electrochemical corrosion involving these chlorine-containing residues as an intermediary.
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patent: 5221424 (1993-06-01), Rhoades
patent: 5248384 (1993-09-01), Lin et al.
patent: 5298112 (1994-03-01), Hayasaka et al.
patent: 5380397 (1995-01-01), Fukuyama et al.
patent: 5411631 (1995-05-01), Hori et al.
Chen Chien-Feng
Wang Huan Wen
Ackerman Stephen B.
Powell William
Saile George O.
Taiwan Semiconductor Manufacturing Company Ltd
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