Method for manufacturing an insulating trench in an SOI substrat

Details Method for manufacturing an insulating trench in an SOI substrat Method for manufacturing an insulating trench in an SOI substrat

1995-11-03

1997-12-23

Fourson, George R.

Fishing, trapping, and vermin destroying

437 90, 437 67, 437160, 437952, H01L 2176

Patent

active

057007128

ABSTRACT:
A method for producing an insulating trench in an SOI substrate having integrated logic elements and high-voltage power components is provided. A trench extending down to an insulating layer is etched and covered with a doped silicon structure. Diffusion regions neighboring the trench are produced by drive-out from the doped amorphous silicon structure and an insulation structure is simultaneously produced in the trench by oxidation of the doped silicon structure.

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