Method of fabricating closely spaced dual diode lasers

Details Method of fabricating closely spaced dual diode lasers Method of fabricating closely spaced dual diode lasers

1993-05-07

1994-11-01

Nguyen, Nam

Fishing, trapping, and vermin destroying

437924, 148DIG102, H01L 2120

Patent

active

053607619

ABSTRACT:
The present invention is directed to a method for fabricating a dual beam semiconductor laser, wherein the laser includes first and second semiconductor laser dies respectively affixed to one another while separated by intervening alignment structures. The alignment structures provide accurate placement of the dual laser beams with respect to one another while also assuring thermal isolation of the laser diodes. The fabrication method employs photolithographic techniques to accurately position the alignment structures across an entire semiconductor wafer, thereby assuring accuracy in alignment of the assembled dual beam lasers. As a result, the need for multiple-step alignment operations commonly employed in the production of multiple diode laser devices is eliminated.

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patent: 4796964 (1989-01-01), Connell et al.
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patent: 4999077 (1991-03-01), Drake et al.
patent: 5105255 (1992-04-01), Shanon et al.
patent: 5283205 (1994-02-01), Sakamoto

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