Process of fabricating capacitor having waved rough surface of a

Details Process of fabricating capacitor having waved rough surface of a Process of fabricating capacitor having waved rough surface of a

1995-11-06

1997-12-23

Niebling, John

Fishing, trapping, and vermin destroying

437919, 437977, H01L 2170

Patent

active

057007101

ABSTRACT:
Crystal grains of a lower polysilicon layer is grown through an annealing or an ion-implantation before separation of the lower polysilicon layer into doped silicon pieces, an upper polysilicon layer with small crystal grains is deposited over the doped silicon pieces so as to wave at long intervals, and the upper polysilicon layer is roughened so as to wave at short intervals, thereby increasing the surface area of an accumulating electrode of a capacitor.

REFERENCES:
patent: 5232876 (1993-08-01), Kim et al.
patent: 5266514 (1993-11-01), Tuan et al.
patent: 5387531 (1995-02-01), Rha et al.
patent: 5554557 (1996-09-01), Koh
patent: 5622888 (1997-04-01), Sekine et al.

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