Self-aligned buried strap for trench type DRAM cells

Details Self-aligned buried strap for trench type DRAM cells Self-aligned buried strap for trench type DRAM cells

1993-12-03

1994-11-01

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 47, 437 60, 437919, H01L 2170, H01L 2700

Patent

active

053607589

ABSTRACT:
A deep trench type DRAM cell with shallow trench isolation has a buried polysilicon strap that is defined without the use of a separate mask by depositing the strap material over at least the deep trench before shallow trench definition and using the shallow trench isolation mask to overlap partially the deep trench, thereby defining the strap during the process of cutting the shallow trench.

REFERENCES:
patent: 4688063 (1987-08-01), Lu et al.
patent: 4801988 (1989-01-01), Kenney
patent: 5049518 (1991-09-01), Fuse et al.
patent: 5200354 (1993-04-01), Om et al.
patent: 5225697 (1993-07-01), Malhi et al.

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