Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1993-01-22

1994-11-01

Thomas, Tom

Fishing, trapping, and vermin destroying

437 10, 437 12, 437247, 148DIG60, H01L 21306

Patent

active

053607481

ABSTRACT:
A method of manufacturing a semiconductor device, which comprises the steps of providing a semiconductor substrate having a first primary surface which is designated to form the semiconductor device and a second primary surface opposite from the first primary surface, the substrate containing contaminants therein; forming a boron-doped layer on the second primary surface of the substrate; and absorbing the contaminants into the boron-doped layer.

REFERENCES:
patent: 4053335 (1977-10-01), Hu
patent: 4608096 (1986-08-01), Hill
patent: 4645546 (1987-02-01), Matsushita

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1802158