Coating apparatus – Gas or vapor deposition – With treating means
Patent
1993-03-12
1994-11-01
Kwon, John T.
Coating apparatus
Gas or vapor deposition
With treating means
118723ER, 31511121, 20429801, C23C 1600
Patent
active
053604830
ABSTRACT:
A plasma CVD apparatus for continuously forming a diamond-like film on a length of magnetic tape, includes a first vacuum vessel, a plasma generating vessel for transforming a gaseous medium into a plasma, and an electrode for accelerating ions of the plasma toward the substrate. The plasma generating vessel has a gas outflow port of a shape complementary to that of the portion of the magnetic tape readied for deposition. A portion of the plasma generating vessel is disposed within the vacuum vessel, with the gas outflow port facing the substrate. A gap between the substrate and the gas outflow port is set to maintain the pressure of plasma in the gap uniform.
REFERENCES:
patent: 3898952 (1975-08-01), Shirahata et al.
patent: 4301765 (1981-11-01), Behn et al.
patent: 4645977 (1987-02-01), Kurokawa et al.
patent: 4647818 (1987-03-01), Ham
patent: 4655167 (1987-04-01), Nakamura et al.
patent: 4673588 (1987-06-01), Bringmann et al.
patent: 4863756 (1989-09-01), Hartig et al.
patent: 5110437 (1992-05-01), Yamada et al.
Kurokawa Hideo
Mitani Tsutomu
Nakaue Hirokazu
Kwon John T.
Matsushita Electric - Industrial Co., Ltd.
LandOfFree
Plasma CVD apparatus and method therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Plasma CVD apparatus and method therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma CVD apparatus and method therefor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1800190