Method of forming field-effect transistors using selectively bea

Details Method of forming field-effect transistors using selectively bea Method of forming field-effect transistors using selectively bea

1984-03-06

1985-05-07

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29576T, 148187, 357 91, H01L 21265, H01L 21306, H01L 21268

Patent

active

045148953

ABSTRACT:
A method of manufacturing MOS field-effect transistors using a wafer (40) having a polycrystal or amorphous semiconductor layer formed on an insulator comprises a step in which an energy beam (44) is applied to the semiconductor layer by scanning the beam intermittently and correlatively to the wafer so as to heat locally the semiconductor layer whereby only a plurality of portions (41) contained in the semiconductor layer and assigned for forming channel regions of MOS field-effect transistors are monocrystallized or the crystalline grains in the above described positions are made large. According to the present invention, a strain occurring in a recrystallized semiconductor can be mitigated by the selective heating.

REFERENCES:
patent: 4187126 (1980-02-01), Radd et al.
patent: 4292091 (1981-09-01), Togei
patent: 4319954 (1982-03-01), White et al.
patent: 4381202 (1983-04-01), Mori et al.
patent: 4383883 (1983-05-01), Mizutani
patent: 4395433 (1983-07-01), Nagakubo et al.
patent: 4415383 (1983-11-01), Naem et al.
patent: 4448632 (1984-05-01), Akasaka
Biegelsen et al., Appl. Phys. Letts. 38 (1981) 150.
Lasky, J. Appl. Phys. 53 (1982) 9038.
Fowler et al., IBM-TDB, 22 (1980) 5473.
Nishimura et al., Appl. Phys. Letts. 42 (1983) 102.
Fowler et al., IBM-TDB, 24 (1981) 1090.

Affiliated with

Also associated with

Rating

Method of forming field-effect transistors using selectively bea does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming field-effect transistors using selectively bea, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming field-effect transistors using selectively bea will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1791781