Semiconductor integrated circuit device manufacturing method

Details Semiconductor integrated circuit device manufacturing method Semiconductor integrated circuit device manufacturing method

1984-01-03

1985-05-07

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29591, 29576B, 148187, H01L 21265

Patent

active

045148945

ABSTRACT:
In a semiconductor integrated circuit device composed of insulated gate field-effect transistors, the improvement comprises the fact that insulated gate field-effect transistors having gate insulating films of substantially equal thicknesses are arranged on a principal surface of a semiconductor substrate in the shape of a matrix. Gate input columns of the transistors are formed of polycrystalline silicon layers, and some of the transistors are enhancement type, while others are depletion type. Further, the respective transistors are formed by the self-alignment technique which employs the polycrystalline silicon layers as a diffusion mask, and the depletion type transistors are formed by implanting impurity ions opposite in the conductivity type to the substrate into selected areas of the surface of the substrate. Thus, a read only memory in a MOS-IC chip has its occupying area reduced remarkably.

REFERENCES:
patent: 3775191 (1973-11-01), McQuhae
patent: 3789503 (1974-02-01), Nishida et al.
patent: 3865650 (1975-02-01), Arita
patent: 3865651 (1975-02-01), Arita
patent: 3873372 (1975-03-01), Johnson
patent: 3874937 (1975-04-01), Huber et al.
patent: 3914855 (1975-10-01), Cheney et al.
patent: 3985591 (1976-10-01), Arita
patent: 4011653 (1977-03-01), Kato et al.
patent: 4183093 (1980-01-01), Kawagoe
patent: 4235010 (1980-11-01), Kawagoe

Affiliated with

Also associated with

Rating

Semiconductor integrated circuit device manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit device manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device manufacturing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1791771