Insulated-gate field effect transistor and method of fabricating

Details Insulated-gate field effect transistor and method of fabricating Insulated-gate field effect transistor and method of fabricating

1985-03-01

1987-03-17

Edlow, Martin H.

357 232, 357 233, 357 237, 357 52, 357 58, H01L 2978

Patent

active

046511822

ABSTRACT:
An insulated-gate field effect transistor (IGFET) having the structure of the source and drain disposed in the longitudinal direction, i.e., the laminating direction, so that the channel region extends in the lateral direction when a high voltage is applied. This structure prevents a high current density at the interface of the channel region and the gate insulation film, allowing the fabrication of a large-current power transistor or the integration of such transistors.

REFERENCES:
patent: 4470060 (1984-09-01), Yamazoki
patent: 4568958 (1986-02-01), Babga

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