Solid-state image sensor provided with a bipolar transistor and

Radiant energy – Photocells; circuits and apparatus – Optical or pre-photocell system

Patent

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Details

250211J, 357 30, H01J 4014

Patent

active

046510168

ABSTRACT:
A signal photoelectrically transduced by a photodiode PD is amplified by a transistor TR.sub.A and then read out by a MOS transistor TR.sub.S.

REFERENCES:
patent: 4407010 (1983-09-01), Baji et al.
"Integrated Arrays of Silicon Photodetectors for Image Sensing," by Dyck et al.

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