Semiconductor imaging device utilizing static induction transist

Radiant energy – Photocells; circuits and apparatus – Optical or pre-photocell system

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250211J, 358213, 357 22, 357 30, H01L 2714, H01L 2980, H01L 3100

Patent

active

046510150

ABSTRACT:
A semiconductor imaging device having a wide dynamic range to provide optimum output response characteristics under various illuminating conditions. The device includes a single SIT (Static Induction Transistor) which has a pair of principal electrode regions of one conduction type disposed facing one another through a channel region made of high resistivity semiconductor material. First and second gate regions of the other conduction type are formed in contact with the channel region to control the current flow between the two principal electrode regions. The second gate is common to all pixels. The potential at the second gate region is made variable by a variable power supply, a variable resistor connected between the second gate region and ground, a variable capacitor connected between the second gate region and ground, or combinations of these elements.

REFERENCES:
patent: 4365262 (1982-12-01), Nishizawa
patent: 4377817 (1983-03-01), Nishizawa et al.
patent: 4468682 (1984-08-01), Cogan
patent: 4518863 (1985-05-01), Fukuoka et al.
patent: 4574310 (1986-03-01), Nishizawa et al.

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